- PII
- S3034558825060017-1
- DOI
- 10.7868/S3034558825060017
- Publication type
- Article
- Status
- Published
- Authors
- Volume/ Edition
- Volume 61 / Issue number 11-12
- Pages
- 683-691
- Abstract
- The effect of deposition conditions on the growth rate, crystal quality, surface morphology and concentration of growth defects of CdTe epitaxial layers obtained by MOCVD on GaAs (310), (100), (111) B substrates using dimethylcadmium and methylallyltellurium (MATe) was studied.The growth rate of CdTe layers under the studied conditions varied from 0.6 to 2.0 μm/h, and the apparent activation energy of the growth process at 300–350°C was in the range of 45.2–54.0 kJ/mol. It is suggested that the limiting stage of deposition in this temperature range is the adsorption stage of reagents (primarily MATe) on the surface. CdTe (100) layers grown at 300–350°C had the best crystal quality. The smoothest and most mirror-like surfaces were found in CdTe (100) and (111)B layers grown at temperatures of 330–350 and 330–370°C, respectively. The conditions for obtaining CdTe (100) layers with a concentration of growth defects (10–20 microns in size) on the surface of ≤150 cm have been established.
- Keywords
- CdTe эпитаксиальные слои MOCVD метиллалилтеллур морфология поверхности кристаллическое совершенство
- Date of publication
- 10.06.2025
- Year of publication
- 2025
- Number of purchasers
- 0
- Views
- 30
References
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